l c^ 10 auct i, one.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 mje13009 switchmode series npn silicon power transistors features ? vceo(s11s) 400 v and 300 v ? reverse bias soa with inductive loads @ tc = 100c ? inductive switching matrix 3 to 12 amp, 25 and 100c tc @ 8 a, 100c is 120 ns (typ) ? 700 v blocking capability ? soa and switching applications information ? these devices are pb-free and are rohs compliant* maximum ratings 12 ampere npn silicon power transistor 400 volts - 100 watts rating collector-emitter voltage collector-emitter voltage emitter-base voltage collector current - continuous -peak (note 1) base current - continuous - peak (note 1) emitter current - continuous -peak (note 1) total device dissipation @ ta = 25c derate above 25c total device dissipation @ tc = 25c derate above 25c operating and storage junction temperature range symbol vceo(sus) vcev vebo ic icm ib ibm ie iem pd pd tj, tstg value 400 700 9 12 24 6 12 18 36 2 0.016 100 0.8 -65 to +150 unit vdc vdc r vdc adc adc adc w w/c w w/c c thermal characteristics to-220ab characteristics thermal resistance, junction-to-ambient thermal resistance, junction-to-case maximum lead temperature for soldering purposes 1/8" from case for 5 seconds symbol rflja rbjc tl max 62.5 1.25 275 unit c/w c/w ?c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mje13009 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics (note 2) collector-emitter sustaining voltage (lc=10ma, ib = 0) collector cutoff current (vcev = rated value, vbe(0fl) = 1 .5 vdc) (vcev = rated value, vbe(ofl) = 1 .5 vdc, tc = 100c) emitter cutoff current (veb = 9 vdc, lc = 0) vceo(sus) 'cev 'ebo 400 - - - - - - 1 5 1 vdc madc madc second breakdown second breakdown collector current with base forward biased clamped inductive soa with base reverse biased is/b see figure 1 see figure 2 on characteristics (note 2) dc current gain (lc = 5 adc, vce = 5 vdc) (lc = 8 adc, vce = 5 vdc) collector-emitter saturation voltage (lc = 5 adc, ib = 1 adc) (lc = 8 adc, ib =1.6 adc) (lc= 12 adc, ib = 3 adc) (lc = 8 adc, ib = 1 -6 adc, tc = 100c) base-emitter saturation voltage (lc = 5 adc, ib = 1 adc) (lc = 8adc, ib= 1.6 adc) (lc = 8adc, ib= 1.6 adc, tc = 100c) hfe vce(sat) vbe(sat) 8 6 _ _ _ - _ _ - _ - _ _ _ - _ _ - 40 30 1 1.5 3 2 1.2 1.6 1.5 vdc vdc dynamic characteristics current-gain - bandwidth product (lc = 500 madc, vce = 10 vdc, f = 1 mhz) output capacitance o/cb = 10 vdc, ie = 0, f = 0.1 mhz) fy cob 4 - - 180 - - mhz pf switching characteristics resistive load (table 1 ) delay time rise time storage time fall time (vcc= 125 vdc, ic = 8a, ibi = is2 = 1 .6 a, tp = 25 (is, duty cycle < 1%) td tr ts tf - - - - 0.06 0.45 1.3 0.2 0.1 1 3 0.7 (is y.s us (is inductive load, clamped (table 1 , figure 1 3) voltage storage time crossover time (lc = 8 a, vdamp = 300 vdc, ibi = 1.6a,vbe(ofo = 5vdc,tc = 100c) tsv tc - - 0.92 0.12 2.3 0.7 (is (is 2. pulse test: pulse width = 300 us, duty cycle = 2%.
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